Nanoscale avalanche photodiodes for highly sensitive and spatially resolved photon detection
Nanoscale avalanche photodiodes for highly sensitive and spatially resolved photon detection
复制标题
DOI：
10.1038/nmat1635
复制
发表时间：
2006-05-01
期刊：
影响因子：
41.2
通讯作者：
Lieber, CM
中科院分区：
文献类型：
--
作者：
Hayden, O;Agarwal, R;Lieber, CM
将纳米光子学与电子学相结合可以增强和/或实现从通信和计算到新型诊断等领域的机会（1，2）。光源和检测器是集成的重要元件（1），并且使用半导体纳米线（3-5）和碳纳米管来产生电驱动源（6-12）和光电导体检测器（13-17）已经取得了关键进展。利用光电导体的检测在纳米尺度上具有相对差的灵敏度，并且因此需要大的放大以检测低光水平并且最终以合理的响应时间检测单光子。在这里，我们报告雪崩倍增的光电流在纳米p-n二极管组成的交叉硅硫化镉纳米线。电输运和光学测量表明，纳米线雪崩光电二极管（nanoAPD）具有小于100个光子的检测限和至少250 nm的亚波长空间分辨率的高灵敏度。交叉的纳米线阵列还表明，nanoAPD是可再现的，并且可以独立寻址而没有串扰。NanoAPD和阵列可以为超密度集成系统、传感和成像应用开辟新的机会。
Integrating nanophotonics with electronics could enhance and/or enable opportunities in areas ranging from communications and computing to novel diagnostics(1,2). Light sources and detectors are important elements for integration(1), and key progress has been made using semiconducting nanowires(3-5) and carbon nanotubes to yield electrically driven sources(6-12) and photoconductor detectors(13-17). Detection with photoconductors has relatively poor sensitivity at the nanometre scale, and thus large amplification is required to detect low light levels and ultimately single photons with reasonable response time. Here, we report avalanche multiplication of the photocurrent in nanoscale p-n diodes consisting of crossed silicon-cadmium sulphide nanowires. Electrical transport and optical measurements demonstrate that the nanowire avalanche photodiodes (nanoAPDs) have ultrahigh sensitivity with detection limits of less than 100 photons, and subwavelength spatial resolution of at least 250 nm. Crossed nanowire arrays also show that nanoAPDs are reproducible and can be addressed independently without cross-talk. NanoAPDs and arrays could open new opportunities for ultradense integrated systems, sensing and imaging applications.