Surface characteristics of parylene-C films in an inductively coupled O2/CF4 gas plasma
Surface characteristics of parylene-C films in an inductively coupled O2/CF4 gas plasma
复制标题
DOI：
10.1016/j.tsf.2010.03.138
复制
发表时间：
2010-09-01
期刊：
影响因子：
2.1
通讯作者：
Kwon, Kwang-Ho
中科院分区：
文献类型：
--
作者：
Ham, Yong-Hyun;Shutov, Dmitriy Alexandrovich;Kwon, Kwang-Ho
本文报道了用O-2/CF4混合气体对聚一氯对二甲苯薄膜进行电感耦合等离子体（ICP）刻蚀的研究结果。研究了在O-2等离子体中加入CF4对腐蚀速率的影响。当CF4气体含量增加到约16%时，聚合物蚀刻速率在277 ~ 373 nm/min范围内增加。原子力显微镜（AFM）分析表明，在O-2等离子体中加入CF4可以降低表面粗糙度。接触角测量表明，表面能随CF4掺量的增加而减小。同时。x射线光电子能谱（XPS）显示了表面相对F原子含量的增加。(C) 2010 Elsevier B.V.版权所有
In this article, we report the results obtained from a study carried out on the inductively coupled plasma (ICP) etching of poly-monochloro-para-xylylene (parylene-C) thin films using an O-2/CF4 gas mixture. The effects of adding CF4 to the O-2 plasma on the etch rates were investigated. As the CF4 gas fraction increases up to approximately 16%, the polymer etch rate increases in the range of 277-373 nm/min. In this work, the atomic force microscopy (AFM) analysis indicated that the surface roughness was reduced by the addition of CF4 to the O-2 plasma. Contact angle measurements showed that the surface energy decreases with increasing CF4 fraction. At the same time. X-ray photoelectron spectroscopy (XPS) demonstrated the increase in the relative F atomic content on the surface. (C) 2010 Elsevier B.V. All rights reserved.