Domain Dynamics During Ferroelectric Switching
Domain Dynamics During Ferroelectric Switching
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DOI：
10.1126/science.1206980
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发表时间：
2011-11-18
期刊：
影响因子：
56.9
通讯作者：
Pan, Xiaoqing
中科院分区：
文献类型：
--
作者：
Nelson, Christopher T.;Gao, Peng;Pan, Xiaoqing
铁电材料的实用性源于使用电场使极化畴成核和移动的能力。为了理解偏振开关的机制，需要在纳米尺度上进行结构表征。我们使用像差校正的透射电子显微镜跟踪的动力学和动力学的铁电开关在毫秒的时间和亚埃的空间分辨率在外延双层的反铁磁铁电体（BiFeO3）的铁磁电极（La0.7Sr0.3MnO3）。我们观察到在电极界面的局部成核事件，畴壁钉扎点缺陷，和铁电畴的形成本地化的铁电和铁磁界面。这些结果显示了缺陷和界面如何阻碍薄膜的完全铁电开关。
The utility of ferroelectric materials stems from the ability to nucleate and move polarized domains using an electric field. To understand the mechanisms of polarization switching, structural characterization at the nanoscale is required. We used aberration-corrected transmission electron microscopy to follow the kinetics and dynamics of ferroelectric switching at millisecond temporal and subangstrom spatial resolution in an epitaxial bilayer of an antiferromagnetic ferroelectric (BiFeO3) on a ferromagnetic electrode (La0.7Sr0.3MnO3). We observed localized nucleation events at the electrode interface, domain wall pinning on point defects, and the formation of ferroelectric domains localized to the ferroelectric and ferromagnetic interface. These results show how defects and interfaces impede full ferroelectric switching of a thin film.