Enhancement-mode AlGaN/GaN heterostructure field effect transistors fabricated by selective area growth technique
Enhancement-mode AlGaN/GaN heterostructure field effect transistors fabricated by selective area growth technique
复制标题
DOI：
10.1063/1.3553229
复制
发表时间：
2011-02
影响因子：
4
通讯作者：
Y. Wen;Zhiyuan He;Jialin Li;Ruihong Luo;P. Xiang;Qingyu Deng;Guang-Kui Xu;Zhen Shen;Zhisheng Wu;Baijun Zhang;Hao Jiang;G. Wang;Yang Liu
中科院分区：
文献类型：
--
作者：
Y. Wen;Zhiyuan He;Jialin Li;Ruihong Luo;P. Xiang;Qingyu Deng;Guang-Kui Xu;Zhen Shen;Zhisheng Wu;Baijun Zhang;Hao Jiang;G. Wang;Yang Liu
本文提出了一种利用选择性面积生长（SAG）技术制备增强模式（e模式）AlGaN/GaN异质结构场效应晶体管（hfet）的方法，与传统方法相比，该方法可以有效地避免等离子体处理对hfet有源区造成的损伤。sag - hfet具有良好的性能，最大漏极电流为300 mA/mm，峰值跨导为135 mS/mm，正阈值电压为0.4 V。结果表明，SAG技术是实现高性能e模GaN基hfet的一种很有前途的方法。
In this letter, a method of using selective area growth (SAG) technique was proposed to fabricate the enhancement-mode (E-mode) AlGaN/GaN heterostructure field effect transistors (HFETs), which can effectively avoid the plasma treatment damage to the active region of HFETs in comparison with the conventional methods. The SAG-HFETs exhibited a good performance of the maximum drain current of 300 mA/mm and peak transconductance of 135 mS/mm with a larger positive threshold voltage of 0.4 V. The results indicate that the SAG technique is a promising method to realize the high performance E-mode GaN based HFETs.