A 2D analytical model of bulk-silicon triple RESURF devices
A 2D analytical model of bulk-silicon triple RESURF devices
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DOI：
10.1109/icsict.2010.5667714
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发表时间：
2010-12
期刊：
影响因子：
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通讯作者：
Tingting Hua;Yufeng Guo;G. Sheu
中科院分区：
文献类型：
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作者：
Tingting Hua;Yufeng Guo;G. Sheu
提出了体硅三重RESURF器件的二维解析模型。在二维泊松解的基础上，得到了表面电势和电场分布的新的解析表达式。根据该模型和半导体器件模拟软件Medici，讨论了器件中电场降低的机理和击穿特性。进一步给出了用于优化漂移区浓度的RESURF掺杂最佳区域。所有的分析结果都得到了Medici的数值结果的支持，表明了本文所提出的模型的有效性。
A 2D analytical model of the bulk-silicon triple RESURF devices is proposed. Based on the 2D Poisson's solution, the new analytical expressions of the surface potential and electric field distributions are obtained. According to the model and the semiconductor device simulator Medici, the electric field reduction mechanism and breakdown characteristics in the device are discussed. Further, a RESURF doping optimal region for optimizing the drift region concentration is given. All analytical results are well supported by the numerical results obtained by Medici, showing the validity of the model presented here.