Effect of oxygen on the growth of (101̄0) GaN surfaces: The formation of nanopipes
Effect of oxygen on the growth of (101̄0) GaN surfaces: The formation of nanopipes
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DOI：
10.1063/1.122826
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发表时间：
1998-12
影响因子：
4
通讯作者：
J. Elsner;Robert Jones;M. Haugk;R. Gutierrez;T. Frauenheim;M. Heggie;S. Öberg;P. Briddon
中科院分区：
文献类型：
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作者：
J. Elsner;Robert Jones;M. Haugk;R. Gutierrez;T. Frauenheim;M. Heggie;S. Öberg;P. Briddon
局域密度泛函方法被用来检查的O和O相关的缺陷复合物的GaN纳米管的墙壁上的行为。我们发现O有向（1010）面偏聚的趋势，并确定被三个氧杂质[VGa-（ON）3]包围的镓空位是一种特别稳定的电惰性复合物。我们认为，在Stranski-Krastanow生长过程中，当晶体管空间收缩时，这些缺陷达到临界浓度，超过该浓度，进一步的生长被阻止，并形成纳米管。
Local density–functional methods are used to examine the behavior of O and O-related defect complexes on the walls of nanopipes in GaN. We find that O has a tendency to segregate to the (1010) surface and identify the gallium vacancy surrounded by three oxygen impurities [VGa–(ON)3] to be a particularly stable and electrically inert complex. We suggest that during Stranski–Krastanow growth, when interisland spaces shrink, these defects reach a critical concentration beyond which further growth is prevented and nanopipes are formed.