Localization capability and limitation of electron-multiplying charge-coupled, scientific complementary metal-oxide semiconductor, and charge-coupled devices for superresolution imaging

Localization capability and limitation of electron-multiplying charge-coupled, scientific complementary metal-oxide semiconductor, and charge-coupled devices for superresolution imaging
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用于超分辨率成像的电子倍增电荷耦合、科学互补金属氧化物半导体和电荷耦合器件的定位能力和局限性

DOI:
10.1117/1.3505017
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发表时间:
2010-11-01
影响因子:
3.5
通讯作者:
Huang, Zhen-Li
Huang, Zhen-Li
中科院分区:
医学3区
文献类型:
--
作者:
Quan, Tingwei;Zeng, Shaoqun;Huang, Zhen-Li

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单个荧光分子的定位在许多用于在细胞和亚细胞水平上可视化生物结构的超分辨率成像技术中是必需的。弱光探测器的定位能力和局限性对于这一目的至关重要。我们提出了一个最新的评估三个典型的低光探测器的性能,包括一个流行的电子倍增CCD(EMCCD),一个新开发的科学CMOS(sCMOS),和一个代表性的冷却CCD,超分辨率成像。我们发现,在一些实验条件下,sCMOS相机表现出竞争力,甚至更好的性能比EMCCD相机,这一直被认为是超分辨率成像领域的首选探测器。(C)2010年,美国光学仪器工程师学会(Society of Photo-Optical Instrumentation Engineers)[DOI 10.1117/1.3505017]
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