Analytical Modeling for a Novel Triple RESURF LDMOS With N-Top Layer
Analytical Modeling for a Novel Triple RESURF LDMOS With N-Top Layer
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DOI：
10.1109/ted.2015.2448120
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发表时间：
2015-07
影响因子：
3.1
通讯作者：
M. Qiao;Yuru Wang;Xin Zhou;Feng Jin;Huihui Wang;Zhuo Wang;Zhaoji Li;Bo Zhang
中科院分区：
文献类型：
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作者：
M. Qiao;Yuru Wang;Xin Zhou;Feng Jin;Huihui Wang;Zhuo Wang;Zhaoji Li;Bo Zhang
本文提出了一种具有低导通电阻n型顶层的新型三还原表面场（RESURF）横向双扩散金属氧化物半导体（LDMOS）场效应晶体管的解析模型。通过求解二维泊松方程，建立了新型三层复用层LDMOS表面电位和电场分布的解析模型，该模型也适用于单层、双层和传统三层复用层结构。垂直击穿电压和横向击穿电压被公式化以量化击穿特性。并推导出氮顶层的最优综合电荷量（Qntop），对氮顶层的剂量有一定的指导作用。根据分析模型，设计和制造了具有低导通电阻n顶层的三层重熔LDMOS。所有的分析结果都可以通过数值和实测结果得到很好的验证，表明了所提模型的有效性。
An analytical model for a novel triple reduced surface field (RESURF) lateral double-diffused metal-oxide-semiconductor (LDMOS) field-effect transistor with a low on-resistance n-type top (N-top) layer is proposed in this paper. The analytical model for surface potential and electric field distributions of the novel triple RESURF LDMOS is presented by solving the 2-D Poisson's equation, which can also be applied in single, double, and conventional triple RESURF structures. The vertical and lateral breakdown voltages are formulized to quantify the breakdown characteristic. Besides, the optimal integrated charge of the N-top layer (Qntop) is derived which can give a guidance for the dose of N-top layer. The triple RESURF LDMOS with a low on-resistance N-top layer is designed and manufactured according to the analytical model. All the analytical results can be well verified by numerical and measured results, showing the validity of the presented model.