Improvement in etching efficiency of borosilicate glass by dissolving internal silver precipitates
Improvement in etching efficiency of borosilicate glass by dissolving internal silver precipitates
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DOI：
10.1016/j.precisioneng.2020.03.016
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发表时间：
2020-07
影响因子：
3.6
通讯作者：
Hirofumi Kawamura;S. Matsusaka;K. Nomoto;H. Kodaka;H. Hidai;A. Chiba;N. Morita
中科院分区：
文献类型：
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作者：
Hirofumi Kawamura;S. Matsusaka;K. Nomoto;H. Kodaka;H. Hidai;A. Chiba;N. Morita
通过施加电压进行固态离子交换可以将金属掺杂到碱硅酸盐玻璃表面。当银是掺杂材料时，这种效果尤其显着，通过施加额外的电压，在玻璃基板中产生银纳米线网络。我们的目标是利用内部网络作为蚀刻剂的渗透路径来提高玻璃基板的湿法蚀刻效率。当浸入氢氟酸 (HF) 中时，银会沉淀玻璃，从而允许蚀刻剂通过纳米线周围的裂缝渗透。结果，银沉淀区域被选择性地溶解，由此形成具有相似形状的盲孔/通孔。银沉淀区域的蚀刻速率（每单位时间的蚀刻深度）为 1.9 μm/min，比原样玻璃（0.58 μm/min）在 20 wt% HF、297 K 下的蚀刻速率高 3.3 倍。
Solid-state ion exchange with an applied voltage enables metal doping into alkali-silicate glass surfaces. The effect is especially prominent when silver is a dopant material, with additional voltage application producing silver nanowire networks in a glass substrate. We aimed to improve the wet etching efficiency of a glass substrate using internal networks as penetration paths of etchants. Silver precipitated glass when immersed in hydrofluoric acid (HF), allowing etchant infiltration via cracks around the nanowires. As a result, the silver-precipitated area was selectively dissolved, due to which blind/through-holes were formed with similar shapes. The etch rate (etched depth per unit time) of the silver-precipitated area was 1.9 μm/min, and was 3.3 times higher than that of the as-received glass (0.58 μm/min) in 20 wt% HF at 297 K.