Predoping effects of boron and phosphorous on arsenic diffusion along grain boundaries in polycrystalline silicon investigated by atom probe tomography
Predoping effects of boron and phosphorous on arsenic diffusion along grain boundaries in polycrystalline silicon investigated by atom probe tomography
复制标题
原子探针断层扫描研究硼和磷的预掺杂对多晶硅中砷沿晶界扩散的影响
DOI：
10.7567/apex.9.106601
复制
发表时间：
2016
影响因子：
2.3
通讯作者：
Y. Nagai
中科院分区：
文献类型：
--
作者：
H. Takamizawa;Y. Shimizu;K. Inoue;Y. Nozawa;T. Toyama;F. Yano;M. Inoue;A. Nishida;Y. Nagai
