Molecular Beam Epitaxial Growth and Characterization of GaAs on Sapphire and Silicon-on-Sapphire Substrates
Molecular Beam Epitaxial Growth and Characterization of GaAs on Sapphire and Silicon-on-Sapphire Substrates
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蓝宝石和蓝宝石上硅衬底上 GaAs 的分子束外延生长和表征
DOI：
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发表时间：
1988
期刊：
影响因子：
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通讯作者：
C. Sukow
中科院分区：
文献类型：
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作者：
T. P. Humphreys;C. Miner;N. Parikh;K. Das;M. K. Summerville;J. Posthill;R. Nemanich;C. Sukow
外延 GaAs 层已通过分子束外延在 (10 1 2) 蓝宝石和蓝宝石上硅衬底上生长。通过光学和透射电子显微镜对生长的层进行表征； 2.1 MeV He + 离子的卢瑟福背向散射/沟道；拉曼光谱；霍尔迁移率测量；金属-半导体接触的光致发光光谱和电流-电压测量。对 GaAs 层的广泛微观结构、电学和光学分析表明，沉积在蓝宝石上硅上的薄膜优于直接生长在 (10 1 2) 蓝宝石衬底上的薄膜。
Epitaxial GaAs layers have been grown by molecular beam epitaxy on (10 1 2) sapphire and silicon-on-sapphire substrates. The grown layers were characterized by optical and transmission electron microscopy; Rutherford backscattering/channeling of 2.1 MeV He + ions; Raman spectroscopy; Hall mobility measurements; photoluminescence spectroscopy and current-voltage measurements from metal-semiconductor contacts. The extensive microstructural, electrical and optical analysis of the GaAs layers indicates that the films deposited on silicon-on-sapphire are superior to those grown directly on (10 1 2) sapphire substrates.