High power pulsed magnetron sputtering of transparent conducting oxides
High power pulsed magnetron sputtering of transparent conducting oxides
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DOI：
10.1016/j.tsf.2007.10.031
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发表时间：
2008-07-01
期刊：
影响因子：
2.1
通讯作者：
Christie, D. J.
中科院分区：
文献类型：
--
作者：
Sittinger, V.;Ruske, F.;Christie, D. J.
本文采用高功率脉冲磁控溅射法（HPPMS）研究了透明导电氧化物的沉积。综述了在不同材料（铟锡氧化物-ITO和铝掺杂氧化锌-AZO）上采用不同的技术方法（陶瓷靶溅射和反应溅射）进行的研究。对于AZO的沉积，采用了金属靶反应HPPMS。反馈控制回路已经实施，以稳定在任何给定的设定点的滞后曲线上的放电。滞后也被发现有一个相当不典型的形式。反应HPPMS被认为是一种有前途的工具，获得高质量的薄膜总厚度低。在ITO沉积的情况下，陶瓷靶已被使用。该过程的特点是在其等离子体发射和增加铟离子化被发现为更高的峰值功率密度。沉积膜的性质进行了比较，直流溅射膜。虽然对于DC溅射，氧添加和屏蔽的选择对于确定表面形态和电阻率是至关重要的，但在HPPMS溅射中，已发现峰值功率密度是影响晶体结构的良好参数。所获得的形态与在DC溅射中所看到的形态有很大不同。在高功率密度下，可以沉积具有低表面粗糙度和优异电阻率的膜，而无需使用屏蔽。(C)2007 Elsevier B. V.保留所有权利。
High power pulsed magnetron sputtering (HPPMS) has been used in order to study the deposition of transparent conducting oxides. We summarize the studies carried out on different materials (indium tin oxide-ITO and aluminium-doped zinc oxide-AZO) using rather different technological approaches, namely sputtering of ceramic targets and reactive sputtering.For the deposition of AZO reactive HPPMS for metallic targets has been used. A feedback control loop has been implemented in order to stabilize the discharge at any given setpoint on the hysteresis curve. The hysteresis was also found to have a rather untypical form. Reactive HPPMS was found to be a promising tool for obtaining high quality films of low total thickness.In the case of ITO deposition a ceramic target has been used. The process has been characterized in terms of its plasma emission and increasing indium ionization was found for higher peak power densities. The properties of the deposited films were compared to DC sputtered films. While for DC sputtering the choice of oxygen addition and shieldings is crucial for determining surface morphology and resistivity, in HPPMS sputtering peak power density has been found to be a good parameter for influencing the crystal structure. The morphologies obtained differ strongly from those seen in DC sputtering. At high power densities films with low surface roughness and excellent resistivity could be deposited without the use of shieldings. (C) 2007 Elsevier B.V. All rights reserved.