Raman spectra of monoand bi-layer graphenes with ion-induced defects-and its dispersive frequency on the excitation energy
Raman spectra of monoand bi-layer graphenes with ion-induced defects-and its dispersive frequency on the excitation energy
复制标题
具有离子诱导缺陷的单层和双层石墨烯的拉曼光谱及其激发能量的色散频率
DOI：
10.7498/aps.62.137801
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发表时间：
2013
影响因子：
1
通讯作者：
Li Jia
中科院分区：
文献类型：
--
作者：
Li Qiao-Qiao;Han Wen-Peng;Zhao Wei-Jie;Lu Yan;Zhang Xin;Tan Ping-Heng;Feng Zhi-Hong;Li Jia
拉曼光谱技术以其无损、快速、灵敏的特点成为表征和研究石墨烯无序性的重要手段。采用离子注入法在单层石墨烯（SLG）和双层石墨烯（BLG）中产生结构缺陷，利用拉曼光谱研究了离子注入后SLG和BLG的一阶和二阶模及其物理来源，并研究了一阶模色散频率与BLG和SLG结构缺陷的关系。结果表明，2450 cm-1峰是1350 cm-1处D模和1150 cm-1处D "模的组合模。
Raman spectroscopy has become a key way for characterizing and studying disorder in graphene,due to its nondestructive,rapid and sensitive technique.In this paper,ion implantation is used to produce the structural defects in single-layer graphene(SLG) and bi-layer graphene(BLG).The first-and second-order modes of ion-implanted SLG and BLG and their physical origins were studied by Raman spectroscopy.The dependence of dispersive frequency of first-and second-order modes in SLG and BLG on the excitation energy was discussed in detail.Results show that the ～ 2450 cm 1 peak is the combination mode of the D mode at ～ 1350 cm 1 and the D '' mode at ～ 1150 cm 1.