Characterization of Al(Cr)N and Ga(Cr)N dilute magnetic semiconductors
Characterization of Al(Cr)N and Ga(Cr)N dilute magnetic semiconductors
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DOI：
10.1016/j.jmmm.2004.11.446
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发表时间：
2005-04-01
影响因子：
2.7
通讯作者：
Smith, DJ
中科院分区：
文献类型：
--
作者：
Gu, L;Wu, SY;Smith, DJ
在700 ~ 825℃的温度下，通过反应分子束外延在6H-SiC衬底上生长出了具有一定Cr浓度的Al(Cr)N和Ga(Cr)N薄膜，在900 K以上的居里温度下，优化的AI(Cr)N和Ga(Cr)N薄膜具有铁磁性。通过电子显微镜和电子衍射对涂层进行了结构表征，发现涂层具有柱状结构和优异的结晶度。进一步的检查排除了AI(Cr)N中任何已知的二次铁磁性杂质，而在Ga(Cr)N薄膜中检测到非常少量（接近0.2%）的反铁磁性CrN。利用能量滤光成像分析了Cr在薄膜中的分布。(c) 2005 Elsevier B.V.版权所有
Thin Al(Cr)N and Ga(Cr)N films with a range of Cr concentrations were grown on 6H-SiC substrates by reactive molecular beam epitaxy at temperatures in the range 700-825 degrees C. Optimized AI(Cr)N and Ga(Cr)N films were found to be ferromagnetic with Curie temperatures above 900 K. Structural characterization by electron microscopy and electron diffraction revealed epilayers with columnar morphology and excellent crystallinity. Further examination ruled out any known secondary ferromagnetic impurities in AI(Cr)N, whereas very small amounts (similar to 0.2%) of antiferromagnetic CrN were detected in the Ga(Cr)N films. Distribution of Cr in the films was analyzed using energy-filtered imaging. (c) 2005 Elsevier B.V. All rights reserved.