Voltage-induced perpendicular magnetic anisotropy change in magnetic tunnel junctions
Voltage-induced perpendicular magnetic anisotropy change in magnetic tunnel junctions
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DOI：
10.1063/1.3279157
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发表时间：
2010-01-11
影响因子：
4
通讯作者：
Suzuki, Y.
中科院分区：
文献类型：
--
作者：
Nozaki, T.;Shiota, Y.;Suzuki, Y.
在外延磁隧道结 (MTJ) 结构中观察到超薄 FeCo 层中电压引起的垂直磁各向异性变化。在各种偏置电压应用下使用自旋转移引起的铁磁共振测量技术来评估各向异性变化。根据峰值频移，我们可以估计在具有 0.5 nm 厚的 FeCo 层的 MTJ 中施加 400 mV/nm 的电场会引起 15 mu J/m(2) 的表面磁各向异性变化。 MTJ 结构中电压引起的各向异性变化的实现将对电场驱动自旋电子器件的发展产生重大影响。
A voltage-induced perpendicular magnetic anisotropy change in an ultrathin FeCo layer was observed in an epitaxial magnetic tunnel junction (MTJ) structure. A spin-transfer induced ferromagnetic resonance measurement technique was used under various bias voltage applications to evaluate the anisotropy change. From the peak frequency shifts, we could estimate that a surface magnetic anisotropy change of 15 mu J/m(2) was induced by an electric field application of 400 mV/nm in the MTJ with a 0.5 nm thick FeCo layer. The realization of voltage-induced anisotropy changes in an MTJ structure should have a large impact on the development of electric-field driven spintronic devices.