Reaction layer formation in nitride ceramics(Si3N4 and AlN) to metal joints bonded with active filler metals.
Reaction layer formation in nitride ceramics(Si3N4 and AlN) to metal joints bonded with active filler metals.
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氮化物陶瓷（Si3N4 和 AlN）与活性填充金属粘合的金属接头中形成反应层。
DOI：
10.2355/isijinternational.30.1142
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发表时间：
1990
影响因子：
1.8
通讯作者：
K. Saida
中科院分区：
文献类型：
--
作者：
Y. Nakao;K. Nishimoto;K. Saida
氮化物陶瓷（Si 3 N4和AlN）与金属的接合在约6 mPa的真空中使用Cu基活性填充金属进行。在Si 3 N4或AlN与插入层的界面处存在反应层，在结合层中存在Cu富集层。Si_3N_4与W接头中的反应层由活性金属的氮化物和硅化物组成，而AlN-Cu接头中的反应层由活性金属的氮化物组成。热力学计算表明，这些产物是氮化物陶瓷与熔化的活性钎料反应生成的。结果表明，Si_3N_4-W接头中反应层的生长行为可用时间指数为1/2的Johnson-Mehl型方程来描述。分析认为，反应层的生长受活性金属在反应层中的扩散过程控制。
Bonding of nitride ceramics (Si3N4 and AlN) to metals was carried out in a vacuum of about 6 mPa using Cu-base active filler metals. Reaction layers existed at the interfaces between Si3N4 or AlN and insert layers, and Cu enriched layers were found in the bonding layers. Reaction layers in Si3N4 to W joints were composed of nitrides and silicides of active metals, and those in AlN-Cu joints were composed of nitrides of active metals. The thermodynamic calculation suggested that these products were formed by the reactions between nitride ceramics and the melted active filler metals. It was elucidated that the growth behavior of the reaction layer in Si3N4-W joints could be expressed by the Johnson-Mehl type equation with a time exponent 'n' of 1/2. It was deduced that the growth of reaction layers were controlled by the diffusion process of active metals in the reaction layers.