Selective growth of PbSe on one or both tips of colloidal semiconductor nanorods
Selective growth of PbSe on one or both tips of colloidal semiconductor nanorods
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DOI：
10.1021/nl048060g
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发表时间：
2005-03-01
期刊：
影响因子：
10.8
通讯作者：
Manna, L
中科院分区：
文献类型：
--
作者：
Kudera, S;Carbone, L;Manna, L
在胶体US和CdSe纳米棒的尖端生长了具有岩盐结构的PbSe纳米晶。纤锌矿棒的晶面为PbSe的生长提供了具有不同反应性程度的衬底。悬挂Cd键的存在可以解释导致PbSe仅在每个US棒的两个尖端中的一个上选择性成核的非等效刻面之间的细微差异。这种方法有可能促进制造具有定制的光学和电子特性的异质结构。
PbSe nanocrystals with rock-salt structure are grown on the tips of colloidal US and CdSe nanorods. The facets of wurtzite rods provide a substrate with various degrees of reactivity for the growth of PbSe. The presence of dangling Cd bonds may explain subtle differences between nonequivalent facets resulting in the selective nucleation of PbSe only on one of the two tips of each US rod. This approach has the potential to facilitate the fabrication of heterostructures with tailored optical and electronic properties.