p-ZnO/n-GaN heterostructure ZnO light-emitting diodes -: art. no. 222101
p-ZnO/n-GaN heterostructure ZnO light-emitting diodes -: art. no. 222101
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DOI：
10.1063/1.1940736
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发表时间：
2005-05-30
影响因子：
4
通讯作者：
Park, SJ
中科院分区：
文献类型：
--
作者：
Hwang, DK;Kang, SH;Park, SJ
本文报道了一种由p-ZnO/n-GaN异质结构组成的ZnO发光二极管（LED）的特性。LED结构由空穴浓度为6.68 × 10（17）cm（-3）的磷掺杂p-ZnO膜和电子浓度为1.1 × 10（18）cm（-3）的Si掺杂n-GaN膜组成。LED的I-V显示出5.4V的阈值电压和在室温下409 nm的电致发光（EL）发射。在409 nm处的EL发射峰归因于p-ZnO和n-GaN的界面处的带偏移导致p-ZnO的带隙减小。(c)2005年美国物理学会。
We report on the characteristics of a ZnO light-emitting diode (LED) comprised of a heterostructure of p-ZnO/n-GaN. The LED structure consisted of a phosphorus doped p-ZnO film with a hole concentration of 6.68x10(17) cm(-3) and a Si-doped n-GaN film with an electron concentration of 1.1x10(18) cm(-3). The I-V of the LED showed a threshold voltage of 5.4 V and an electroluminescence (EL) emission of 409 nm at room temperature. The EL emission peak at 409 nm was attributed to the band gap of p-ZnO which was reduced as the result of the band offset at the interface of p-ZnO and n-GaN. (c) 2005 American Institute of Physics.