Designing guardbands for instantaneous aging effects
Designing guardbands for instantaneous aging effects
复制标题
设计瞬时老化效应的防护带
DOI：
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发表时间：
2016
期刊：
影响因子：
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通讯作者：
J. Henkel
中科院分区：
文献类型：
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作者：
V. M. V. Santen;H. Amrouch;J. Martín;M. Nafría;J. Henkel
偏置温度不稳定性（BTI）是纳米CMOS电路可靠性下降的主要原因之一。虽然BTI的长期影响多年来一直在研究，但BTI对电路的短期影响尚未探索。事实上，在物理学中，短期BTI效应，即瞬时（即亚μs）频率相关过程，最近已经报道。为了设计具有对长期和瞬时效应安全的保护带的电路，需要新的老化模型。我们提出的第一种方法，实际上考虑了长期以及瞬时BTI的影响。它可以用于微架构级别的复杂电路。基于我们的物理BTI模型设计保护带可将保护带减少41%，从而允许开发更具成本效益且可靠的设计。我们还重新审视了现有的最先进的老化缓解技术，以研究它们如何能够适当地适应额外的瞬时老化效应。沿着我们的BTI模型，这进一步减少了高达59%的保护带。
Bias Temperature Instability (BTI) is one of the key causes of reliability degradations of nano-CMOS circuits. While the long-term impact of BTI has been studied since years, the short-term implications of BTI on circuits are unexplored. In fact, in physics short-term BTI effects, i.e. instantaneous (i.e. sub μs) frequency dependent processes, have been recently reported. In order to design circuits with guardbands that are safe for long-term and instantaneous effects, new aging models are required. We are presenting the first approach that in fact considers both long-term as well as instantaneous BTI effects. It can be employed for complex circuits at the micro-architecture level. Designing guardbands based upon our physical BTI model reduces the guardbands by 41% and thus allows for the development of more cost-effective yet reliable designs. We also revisit existing state-of-the-art aging mitigation techniques to investigate how they can be properly adapted to additionally account for instantaneous aging effects. Along with our BTI model this further reduces the guardbands by up to 59%.