Effects of the surface treatment of silicon substrate on the field emission characteristic of a silicon and amorphous diamond cold cathode emitter
Effects of the surface treatment of silicon substrate on the field emission characteristic of a silicon and amorphous diamond cold cathode emitter
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DOI：
10.1016/s0304-3991(99)00060-1
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发表时间：
1999-09-01
期刊：
影响因子：
2.2
通讯作者：
Xu, NS
中科院分区：
文献类型：
--
作者：
Chen, J;Chen, J;Xu, NS
本文详细研究了硅衬底表面处理对平面非晶金刚石（a-D）薄膜场发射体场发射过程的影响。采用过滤式阴极真空电弧等离子体沉积系统（FCVAPD），在未经处理和经过刻蚀的n型和p型硅片上沉积了非晶金刚石（a-D）薄膜。测量了沉积a-D膜前后的场致电子发射特性。与未处理的硅片相比，腐蚀硅片上的a-D峰显示出发射电流的明显增加。这一现象的产生主要是由于a-D膜表面电子亲合势低甚至为负以及硅-金刚石界面处的局域场增强。(C)1999 Elsevier Science B. V.保留所有权利。
Details are given of an experimental study of the effects of surface treatment of silicon substrate on the field emission process of flat amorphous diamond (a-D) film field emitters. Using a filtered cathodic vacuum are plasma deposition system (FCVAPD), the amorphous diamond (a-D) film was deposited on both non-treated and etched silicon wafers (n-type and p-type). The field electron emission characteristic was measured before and after depositing a-D film. The a-D him on etched silicon wafer shows distinct increase in emission current compared with that on non-treated silicon wafer. The phenomenon is attributed to two important reasons: the low or even negative surface electron affinity of a-D film and the local field enhancement at the Si-diamond interface. (C) 1999 Elsevier Science B.V. All rights reserved.