Breakdown walkout and its reduction in high-voltage pLDMOS transistors on thin epitaxial layer
Breakdown walkout and its reduction in high-voltage pLDMOS transistors on thin epitaxial layer
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DOI：
10.1049/el:19920976
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发表时间：
1992-07
影响因子：
1.1
通讯作者：
M.-J. Zhou;A. D. Bruycker;A. Calster;J. Witters;G. Schols
中科院分区：
文献类型：
--
作者：
M.-J. Zhou;A. D. Bruycker;A. Calster;J. Witters;G. Schols
通过离子注入改变漂移区的表面电场，观察和研究了薄外延层上高压pLDMOS晶体管的击穿走离。结果表明，漂移与表面场密切相关，通过确定合适的注入量可以减小漂移。
Breakdown walkout in high-voltage pLDMOS transistors on a thin epitaxial layer is observed and investigated by using ion implantation to vary the surface electric field in the drift region. Results show that the walkout is closely related to the surface field and can be reduced by determining the correct extent of ion implantation.