Transverse piezoelectric properties of {110}-oriented PLZT thin films
Transverse piezoelectric properties of {110}-oriented PLZT thin films
复制标题
{110}取向PLZT薄膜的横向压电性能
DOI：
10.1080/10584587.2018.1521659
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发表时间：
2018
影响因子：
0.7
通讯作者：
Kanno Isaku
中科院分区：
文献类型：
--
作者：
Laxmi Priya S.;Kumar V.;Teramoto Takuya;Kanno Isaku
在镀铂硅基底上制备了沿同形相界、厚度为 1.5μm 的优先 {110} 取向的锆钛酸铅镧薄膜，(Pb, La) (Zr, Ti)O3[PLZT]，其组成为 (7/65/35)、(7/60/40) 和 (7/56/44)，厚度为 1.5μm (111) 采用溶胶凝胶旋涂技术的 Pt/Ti/SiO2/Si。分别通过X射线衍射和拉曼光谱分析了晶体取向和晶相。研究了 PLZT 薄膜的横向压电系数对其成分和织构的依赖性。发现具有较高四方晶含量的 PLZT (7/60/40) 薄膜表现出最佳的压电特性。通过结合介电和极化电场（P-E）研究获得的结果，建立了负责的域切换机制。
Preferentially {110}-oriented thin films of lead lanthanum zirconate titanate, (Pb, La) (Zr, Ti)O3[PLZT] having compositions (7/65/35), (7/60/40) and (7/56/44) across the morphotropic phase boundary with a thickness of 1.5µm were prepared on platinised silicon substrates (111) Pt/Ti/SiO2/Si by sol-gel spin coating technique. The crystallographic orientation and crystalline phases were analysed by X-ray diffraction and Raman spectroscopy respectively. The dependence of the transverse piezoelectric coefficient,of the PLZT thin films on their composition and texture have been investigated. PLZT (7/60/40) thin films having a higher tetragonal content was found to exhibit optimum piezoelectric characteristics. By combining the results obtained from the dielectric and polarisation-electric field (P-E) studies, the domain switching mechanism responsible forhave been established.