Photo-induced enhancement of the power factor of Cu2S thermoelectric films.
Photo-induced enhancement of the power factor of Cu2S thermoelectric films.
复制标题
光致增强 Cu2S 热电薄膜的功率因数
DOI：
10.1038/srep16291
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发表时间：
2015-11-17
影响因子：
4.6
通讯作者：
Chen L
中科院分区：
文献类型：
--
作者：
Lv Y;Chen J;Zheng RK;Song J;Zhang T;Li X;Shi X;Chen L
元素掺杂通常用于调节半导体（例如热电材料）中的载流子浓度。然而，掺杂过程不可避免地带来晶格中的缺陷或畸变，这进一步强烈地影响材料的物理性质。在这项工作中，高能光子已被用来激活Cu2S热电薄膜中的载流子。结果，载流子浓度和相应的电导率以及塞贝克系数进一步改变。利用并联电路模型进一步分析了光子诱导的电输运性质。由于实现了最佳的载流子浓度的光子激活，Cu2S薄膜的功率因数提高了900倍以上的黑暗数据相比。与传统的掺杂工艺相比，利用光子激活的方法可以在不影响晶格的情况下实现载流子浓度的调节。这种方法提供了一个机会，以研究半导体材料的固有物理特性，而不涉及传统的元素掺杂过程，通常会带来额外的晶格缺陷或扭曲。
Element doping is commonly used to adjust the carrier concentrations in semiconductors such as thermoelectric materials. However, the doping process unavoidably brings in defects or distortions in crystal lattices, which further strongly affects the physical properties of the materials. In this work, high energy photons have been used to activate the carriers in Cu2S thermoelectric films. As a result, the carrier concentrations and the respective electrical conductivity as well as Seebeck coefficient are further changed. The photon-induced electrical transport properties are further analyzed utilizing a Parallel circuit model. Due to the realization of optimized carrier concentrations by photon activation, the power factor of Cu2S film is improved more than 900 times as compared with the dark data. As compared to the traditional doping process, the approach using photon activation can realize the tuning of carrier concentrations without affecting crystal lattice. This method provides an opportunity to investigate the intrinsic physical properties of semiconductor materials without involving traditional element doping process that usually brings in additional lattice defects or distortions.