On optical reflection at heterojunction interface of thin film solar cells
On optical reflection at heterojunction interface of thin film solar cells
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DOI：
10.1016/j.solmat.2012.12.035
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发表时间：
2013-04
影响因子：
6.9
通讯作者：
L. Zhu;Jikui Luo;G. Shao;W. Milne
中科院分区：
文献类型：
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作者：
L. Zhu;Jikui Luo;G. Shao;W. Milne
异质结是光伏太阳能电池发展的重要结构。与同质结结构相比，异质结太阳能电池具有内部晶体界面，可以反射部分入射光，尽管许多异质结太阳能电池已经商业化，但之前没有仔细考虑过这一点。本文讨论了用于异质结构太阳能电池开发的各种材料体系的内反射。研究发现，最常见的异质结太阳能电池的内反射率小于2%，而一些潜在的异质结太阳能电池如ITO/GaAs、ITO/InP、Si/Ge、聚合物/半导体和氧化物半导体的内反射率可能高达20%。对于太阳能电池来说，折射率较低的窗口层比吸收层更糟糕。忽视这种强烈的内部反射会导致转换效率严重恶化和降低；因此，必须采取措施尽量减少或防止这种内部反射。
Heterojunction is an important structure for the development of photovoltaic solar cells. In contrast to homojunction structures, heterojunction solar cells have internal crystalline interfaces, which will reflect part of the incident light, and this has not been considered carefully before though many heterostructure solar cells have been commercialized. This paper discusses the internal reflection for various material systems used for the development of heterostructure-based solar cells. It has been found that the most common heterostructure solar cells have internal reflection less than 2%, while some potential heterojunction solar cells such as ITO/GaAs, ITO/InP, Si/Ge, polymer/semiconductors and oxide semiconductors may have internal reflection as high as 20%. Also it is worse to have a window layer with a lower refractive index than the absorption layer for solar cells. Ignoring this strong internal reflection will lead to severe deterioration and reduction of conversion efficiency; therefore measures have to be taken to minimize or prevent this internal reflection.