An HBT MMIC power amplifier with an integrated diode linearizer for low-voltage portable phone applications
An HBT MMIC power amplifier with an integrated diode linearizer for low-voltage portable phone applications
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具有集成二极管线性化器的 HBT MMIC 功率放大器，适用于低压便携式电话应用
DOI：
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发表时间：
1998
期刊：
影响因子：
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通讯作者：
S. Hara
中科院分区：
文献类型：
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作者：
T. Yoshimasu;Masanori Akagi;N. Tanba;S. Hara
本文详细描述了一种使用晶体管基极-集电极结二极管的新型线性化技术。新颖的线性化技术有效地改善了异质结双极晶体管（HBT）的增益压缩和相位失真，而无需额外的直流消耗，从而实现/spl pi // 4 DQPSK调制信号的高效线性放大。 AlGaAs/GaAs HBT 单片微波集成电路 (MMIC) 线性功率放大器采用新颖的线性化技术制造，适用于 1.9 GHz 日本个人手持电话系统 (PHS) 中使用的手机。所制作的HBT MMIC功率放大器在2.7 V的工作电压下表现出21 dBm的输出功率和高达37%的功率附加效率。在此额定输出功率下，/spl plusmn/600 kHz偏移频带中的邻道功率抑制为-55 dBc，误差矢量幅度为4.3%。测量的线性度完全符合 PHS 标准。
This paper gives a detailed description of a novel linearization technique using a transistor base-collector junction diode. The novel linearization technique effectively improves the gain compression and phase distortion of the heterojunction bipolar transistor (HBT) with no additional dc consumption, leading to highly efficient linear amplification of the /spl pi//4 DQPSK modulation signals. An AlGaAs/GaAs HBT monolithic microwave integrated circuit (MMIC) linear power amplifier was fabricated using the novel linearization technique for the handsets used in the 1.9 GHz Japanese Personal Handy Phone System (PHS). The fabricated HBT MMIC power amplifier exhibits an output power of 21 dBm and a power-added efficiency as high as 37% at an operation voltage of 2.7 V. At this rated output power, the adjacent channel power rejection in /spl plusmn/600 kHz offset frequency bands is -55 dBc and the error vector magnitude is 4.3%. This measured linearity is well within the PHS standard.