RHEED study of Pd film growth on Al2O3 (111)/NiAl (110)
RHEED study of Pd film growth on Al2O3 (111)/NiAl (110)
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Al2O3 (111)/NiAl (110) 上 Pd 薄膜生长的 RHEED 研究
DOI：
10.1016/j.tsf.2004.05.109
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发表时间：
2004
期刊：
影响因子：
--
通讯作者：
M. Yoshitake
中科院分区：
文献类型：
--
作者：
V. Moroz;Y. Lykhach;M. Yoshitake
用反射高能电子衍射（RHEED）和俄歇电子能谱（AES）研究了在有序的{gamma}-Al{sub 2}O{sub 3}（111）层上生长的钯（Pd）层。单晶NiAl（110）表面在1070 K、1200 L O2、pO 2 = 6.6 × 10 {sup-6} Pa的条件下进行氧化，制备了厚度为7-8埃的外延Al 2 O3层。在300 K的衬底温度下进行了分步Pd沉积。根据沉积的Pd的量，检测到两种不同的生长模式。已发现在低Pd覆盖度的多晶相的形成，而优先取向的Pd岛的外观已被检测到在Pd覆盖度0.5 ML。发现了两种具有平行于（111）Al{sub 2}O{sub 3}表面的（111）外延面的Pd岛。
The palladium (Pd) layer growth on well-ordered {gamma}-Al{sub 2}O{sub 3} (111) layer has been studied by means of reflection high energy electron diffraction (RHEED) and Auger electron spectroscopy (AES). Epitaxial Al{sub 2}O{sub 3} layer of the thickness 7-8 A was prepared by the oxidation of single-crystalline NiAl (110) surface performed at 1070 K and 1200 L of O{sub 2} under pO{sub 2}=6.6x10{sup -6} Pa. The stepwise Pd deposition has been performed at a substrate temperature of 300 K. Depending on the amount of deposited Pd, two different growth modes were detected. The formation of polycrystalline phase has been found at low Pd coverage, whereas the appearance of preferentially oriented Pd islands has been detected at Pd coverage 0.5 ML. Two populations of Pd islands having (111) epitaxial plane parallel to (111) Al{sub 2}O{sub 3} surface were found.