AlGaN/GaN quantum well ultraviolet light emitting diodes
AlGaN/GaN quantum well ultraviolet light emitting diodes
复制标题
DOI：
10.1063/1.122246
复制
发表时间：
1998-09-21
影响因子：
4
通讯作者：
Nurmikko, AV
中科院分区：
文献类型：
--
作者：
Han, J;Crawford, MH;Nurmikko, AV
我们报告了紫外 GaN 量子阱发光二极管的生长和表征。室温电致发光发射峰值为 353.6 nm，线宽为 5.8 nm。在简单的平面器件中，在没有任何提高光提取效率的情况下，在 20mA 下测得的输出功率为 13μW，在当前设计中受到 GaN 盖层和缓冲层吸收的限制。脉冲电致发光数据表明，输出功率在电流密度接近 9 kA/cm(2) 时不会饱和。 (C) 1998 年美国物理研究所。
We report on the growth and characterization of ultraviolet GaN quantum well light emitting diodes. The room-temperature electroluminescence emission was peaked at 353.6 nm with a narrow linewidth of 5.8 nm. In the simple planar devices, without any efforts to improve light extraction efficiency, an output power of 13 mu W at 20 mA was measured, limited in the present design by absorption in the GaN cap layer and buffer layer. Pulsed electroluminescence data demonstrate that the output power does not saturate up to current densities approaching 9 kA/cm(2). (C) 1998 American Institute of Physics.