Two-dimensional semiconductor alloys: Monolayer Mo1−xWxSe2
Two-dimensional semiconductor alloys: Monolayer Mo1−xWxSe2
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DOI：
10.1063/1.4834358
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发表时间：
2014-01
影响因子：
4
通讯作者：
S. Tongay;Deepa S. Narang;Jun Kang;W. Fan;C. Ko;Alexander V. Luce;Kevin K. W. Wang;Joonki Suh-
中科院分区：
文献类型：
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作者：
S. Tongay;Deepa S. Narang;Jun Kang;W. Fan;C. Ko;Alexander V. Luce;Kevin K. W. Wang;Joonki Suh-
从合成的晶体中实验实现了单层Mo1−xWxSe2(x=0，0.14，0.75和1)合金。Mo_1-−_xW_xSe_2是一种直接带隙半导体材料，具有很高的发光性能，在常温下很稳定。带隙的大小可以通过改变W组分来调节。有趣的是，带隙数值并不随构图的变化而线性变化。这种非线性归因于导带最小态在Mod轨道周围的局域化，而价带最大态均匀分布在W和Mod轨道之间。结果介绍了具有不同能隙大小的单层Mo1−xWxSe2合金，为拓宽二维半导体的材料库和应用提供了平台。
Monolayer Mo1−xWxSe2 (x = 0, 0.14, 0.75, and 1) alloys were experimentally realized from synthesized crystals. Mo1−xWxSe2 monolayers are direct bandgap semiconductors displaying high luminescence and are stable in ambient. The bandgap values can be tuned by varying the W composition. Interestingly, the bandgap values do not scale linearly with composition. Such non-linearity is attributed to localization of conduction band minimum states around Mo d orbitals, whereas the valence band maximum states are uniformly distributed among W and Mo d orbitals. Results introduce monolayer Mo1−xWxSe2 alloys with different gap values, and open a venue for broadening the materials library and applications of two-dimensional semiconductors.