Interaction of dopant atoms with stacking faults in silicon crystals
Interaction of dopant atoms with stacking faults in silicon crystals
复制标题
硅晶体中掺杂剂原子与堆垛层错的相互作用
DOI：
--
复制
发表时间：
2010
期刊：
影响因子：
--
通讯作者：
I. Yonenaga
中科院分区：
文献类型：
--
作者：
Y. Ohno;T. Taishi;Y. Tokumoto;I. Yonenaga
研究了重掺杂n型或p型掺杂原子的czochralski生长硅晶体在1173 K退火时层错能的变化。在n型晶体中，能量随退火时间的增加而降低。掺杂原子浓度越高，降低的程度越大。另一方面，p型晶体和非掺杂晶体的能量在退火过程中没有变化。这些结果表明，在电子相互作用下，n型掺杂原子通过热迁移在层错附近偏析，导致层错能降低。
Variation in stacking fault energy with annealing at 1173 K were identified in Czochralski-grown silicon crystals heavily doped with n- or p-type dopant atoms. In n-type crystals, the energy decreased with increasing annealing time. The higher the concentration of dopant atoms, the larger the degree of the decrease. On the other hand, the energy was unchanged during annealing in p-type and nondoped crystals. These results imply that n-type dopant atoms segregate nearby a stacking fault, via their thermal migration, under an electronic interaction leading to a reduction in the stacking fault energy.