Piezoresistive strain sensor based on monolayer molybdenum disulfide continuous film deposited by chemical vapor deposition
Piezoresistive strain sensor based on monolayer molybdenum disulfide continuous film deposited by chemical vapor deposition
复制标题
基于化学气相沉积单层二硫化钼连续薄膜的压阻应变传感器
DOI：
10.1088/1361-6439/ab0726
复制
发表时间：
2019
影响因子：
2.3
通讯作者：
Ono Takahito
中科院分区：
文献类型：
--
作者：
Zhu Minjie;Sakamoto Kei;Li Jinhua;Inomata Naoki;Toda Masaya;Ono Takahito
本文采用低压化学气相沉积（LPCVD）方法制备了厘米级单层二硫化钼薄膜。在该LPCVD系统中，生长压力对薄膜质量的依赖关系进行了研究。薄膜的层性、电学特性表明，获得了高质量的MoS 2薄膜。另外，采用氢氟酸处理的SiO2/Si衬底，提高了MoS 2薄膜的质量。利用硅模板掩模在MoS 2薄膜上直接构图金属接触焊盘，制成了基于单层MoS 2薄膜元件的压阻式应变传感器。采用四点弯曲法获得了压缩应变下的104±26的规范因子，这可能为二维（2D）基于材料的微系统和电子学带来新的可能性。
In this paper, a centimeter-scale monolayer molybdenum disulfide (MoS 2) film deposition method has been developed through a simple low-pressure chemical vapor deposition (LPCVD) growth system. The growth pressure dependence on film quality is investigated in this LPCVD system. The layer nature, electrical characteristic of the as-grown MoS 2 films indicate that high quality films have been achieved. In addition, a hydrofluoric acid treated SiO 2/Si substrate is used to improve the quality of the MoS 2 films. Piezoresistive strain sensor based on the monolayer MoS 2 film elements is fabricated by directly patterning metal contact pads on MoS 2 films through a silicon stencil mask. A gauge factor of 104±26 under compressive strain is obtained by using a four-point bending method, which may inspire new possibilities for two-dimensional (2D) material-based microsystems and electronics.