Formation of a passivating CH3NH3PbI3/PbI2 interface during moderate heating of CH3NH3PbI3 layers
Formation of a passivating CH3NH3PbI3/PbI2 interface during moderate heating of CH3NH3PbI3 layers
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DOI：
10.1063/1.4826116
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发表时间：
2013-10-28
影响因子：
4
通讯作者：
Dittrich, Th.
中科院分区：
文献类型：
--
作者：
Supasai, T.;Rujisamphan, N.;Dittrich, Th.
用调制表面光电压谱(SPV)研究了真空加热过程中CH3NH3PbI3的层数。制备的CH3NH3PbI3层为耗尽型p型掺杂半导体，禁带宽度为1.5 eV。加热到140℃后，CH3NH3PbI3的SPV信号的符号发生了变化，在2.36 eV处出现了属于PbI2的第二禁带，而与电荷从缺陷态分离有关的SPV信号在适度加热后减少了。(C)2013 AIP出版有限责任公司。
Layers of CH3NH3PbI3 are investigated by modulated surface photovoltage spectroscopy (SPV) during heating in vacuum. As prepared CH3NH3PbI3 layers behave as a p-type doped semiconductor in depletion with a band gap of 1.5 eV. After heating to 140 degrees C the sign of the SPV signals of CH3NH3PbI3 changed concomitant with the appearance of a second band gap at 2.36 eV ascribed to PbI2, and SPV signals related to charge separation from defect states were reduced after moderate heating. (c) 2013 AIP Publishing LLC.