Formation, characterization, and properties of a new boron-carbon-nitrogen crystal
Formation, characterization, and properties of a new boron-carbon-nitrogen crystal
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DOI：
10.1063/1.371077
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发表时间：
1999-08
影响因子：
3.2
通讯作者：
B. Yao;Lina Liu;W. Su
中科院分区：
文献类型：
--
作者：
B. Yao;Lina Liu;W. Su
通过在氩气气氛中机械研磨六方氮化硼（h-BN）和石墨粉末的混合物120小时来生产非晶硼-碳-氮（BCN）粉末。通过将非晶BCN粉末在880 K以上的温度下在4 GPa下等温退火，获得了具有四方结构的新B-C-N晶体。其晶格常数随着退火温度的升高而减小，在1170 K退火温度下，分别为a=1.685 nm和c=0.537 nm。电导率测量表明，新的B-C-N相是带隙非常小的半导体，并且带隙在室温至840 K之间随温度变化。(C) 1999美国物理研究所。 [S0021-8979(99)09117-3]。
Amorphous boron-carbon-nitrogen (BCN) powders were produced by mechanically milling a mixture of hexagonal boron nitride (h-BN) and graphite powders for 120 h in an argon atmosphere. By annealing the amorphous BCN powders isothermally under 4 GPa at temperatures above 880 K, a new B-C-N crystal with a tetragonal structure was obtained. Its lattice constants decrease with the increasing annealing temperature and are a=1.685 nm and c=0.537 nm, respectively at an annealing temperature of 1170 K. The conductivity measurement suggests the new B-C-N phase is a semiconductor with a very small band gap and the band gap changes depending on the temperature in the temperatures between room temperature and 840 K. (C) 1999 American Institute of Physics. [S0021-8979(99)09117-3].