Cryogenic Characterisation and Modelling of Commercial SiC MOSFETs
Cryogenic Characterisation and Modelling of Commercial SiC MOSFETs
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DOI：
10.4028/www.scientific.net/msf.897.557
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发表时间：
2016-09
期刊：
影响因子：
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通讯作者：
Lee J. Woodend-;P. Gammon;V. Shah;A. Pérez‐Tomás;Fan Li;D. Hamilton;M. Myronov;P. Mawby
中科院分区：
文献类型：
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作者：
Lee J. Woodend-;P. Gammon;V. Shah;A. Pérez‐Tomás;Fan Li;D. Hamilton;M. Myronov;P. Mawby
在30 ~ 320 K温度范围内对两种商用1.2 kV SiC MOSFET进行了广泛的表征。它们的I/V特性，阈值电压和击穿电压的温度依赖性已被检查，并在本文中提出。总的来说，两种器件的测量特性表现出非常相似的温度依赖性，并且表明温度低于~100 K时，任何进一步的温度降低对任何测试特性的影响都很小。温度升高到100 K以上，在给定的漏源和栅源电压下，漏电流减小，阈值电压减小，击穿电压增大。已经成功地尝试通过应用文献中发现的理论来模拟这些测试的结果。
Two commercial 1.2 kV SiC MOSFETs have been extensively characterised from 30 to 320 K. The temperature dependence of their I/V characteristics, threshold voltage, and breakdown voltage has been examined and are presented in this paper. Overall, the measured characteristics of both devices demonstrate very similar temperature dependencies and it is shown that below ~100 K any further decrease in temperature has little effect on any of the tested characteristics. Increasing temperature beyond 100 K results in a decrease in drain current for a given drain-source and gate-source voltage, a decrease in threshold voltage, and an increase in breakdown voltage. Successful attempts have been made to model the results of these tests by applying theories found in the literature.