Charge multiplication effect in thin diamond films
Charge multiplication effect in thin diamond films
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金刚石薄膜中的电荷倍增效应
DOI：
10.1063/1.4959863
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发表时间：
2016
影响因子：
4
通讯作者：
T. Kamiya and M. Jaksic;,
中科院分区：
文献类型：
--
作者：
50.N. Skukan;V. Grilj;I. Sudic;;M. Pomorski;W. Kada;T. Makino;Y. Kambayashi;Y. Andoh;S. Onoda;S. Sato;T. Ohshima;T. Kamiya and M. Jaksic;,
在这里，我们报告的提高灵敏度的单晶化学气相沉积（scCVD）金刚石辐射探测器中的带电粒子的检测。实验结果表明，在薄的平面金刚石膜探测器的电荷倍增，18 MeV的O离子的影响，在高电场条件下。雪崩倍增被广泛应用于雪崩光电二极管等器件中，但以前从未在本征CVD金刚石中可重复地观察到。由于增强的灵敏度带电粒子检测获得短的电荷漂移长度没有暗计数，这种效果可以进一步利用在开发的传感器的基础上雪崩倍增和辐射探测器具有极端的辐射硬度。
Herein, we report on the enhanced sensitivity for the detection of charged particles in single crystal chemical vapour deposition (scCVD) diamond radiation detectors. The experimental results demonstrate charge multiplication in thin planar diamond membrane detectors, upon impact of 18 MeV O ions, under high electric field conditions. Avalanche multiplication is widely exploited in devices such as avalanche photo diodes, but has never before been reproducibly observed in intrinsic CVD diamond. Because enhanced sensitivity for charged particle detection is obtained for short charge drift lengths without dark counts, this effect could be further exploited in the development of sensors based on avalanche multiplication and radiation detectors with extreme radiation hardness.