In situ patterning of organic single-crystalline nanoribbons on a SiO2 surface for the fabrication of various architectures and high-quality transistors
In situ patterning of organic single-crystalline nanoribbons on a SiO2 surface for the fabrication of various architectures and high-quality transistors
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DOI：
10.1002/adma.200600542
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发表时间：
2006-11-17
影响因子：
29.4
通讯作者：
Zhu, Daoben
中科院分区：
文献类型：
--
作者：
Tang, Qingxin;Li, Hongxiang;Zhu, Daoben
有机单晶纳米带是通过原位图案化技术制备的，以产生不同的结构。基于这种图案化纳米带的有机场效应晶体管(见图)显示出低阈值电压和高载流子迁移率。这种原位图案化技术克服了手工挑选工艺制造有机单晶器件的一般缺点，为利用纳米晶体制造结构和器件开辟了一条新的途径。
Organic single-crystalline nanoribbons are fabricated through an in situ patterning technique to yield various architectures. Organic field-effect transistors based on such patterned nanoribbons (see figure) are shown to exhibit low threshold voltages and high carrier mobilities. This in situ patterning technique overcomes the general disadvantages of the handpicking process for the fabrication of organic single-crystal devices and opens up a new route for the fabrication of architectures and devices using nanocrystals.