Theoretical Analysis of AlAs₀.₅₆Sb₀.₄₄ Single Photon Avalanche Diodes With High Breakdown Probability
Theoretical Analysis of AlAs₀.₅₆Sb₀.₄₄ Single Photon Avalanche Diodes With High Breakdown Probability
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DOI：
10.1109/jqe.2021.3058356
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发表时间：
2021-04
影响因子：
2.5
通讯作者：
Jamal Ahmed;S. Xie;B. Liang;Xin Yi;X. Jin;M. Kesaria;J. David;D. Huffaker
中科院分区：
文献类型：
--
作者：
Jamal Ahmed;S. Xie;B. Liang;Xin Yi;X. Jin;M. Kesaria;J. David;D. Huffaker
单光子雪崩二极管（spad）是近红外波长范围内广泛应用的关键使能技术。最近，由于AlAs0.56 Sb0.44（以下简称AlAsSb）的电子和空穴电离系数差异较大（分别为$\alpha $和$\beta $），在极低过量噪声雪崩光电二极管（apd）中被证明与InP晶格匹配。$\alpha /\beta $比值也在盖革模式操作中发挥作用，因为它影响雪崩击穿概率，从而影响检测效率。在这项工作中，我们从理论上研究了基于AlAsSb的spad的性能。电子引发的盖革模式操作的击穿概率随着倍增区宽度的增加而急剧增加，这是由于电离系数逐渐增加。与其他常见的雪崩材料（如InAlAs、InP和Si）相比，我们的研究结果还表明，在相同的低过偏比下，基于AlAsSb的spad的击穿概率比其他三种材料更大。在5时，AlAsSb的击穿概率为0.81，比InAlAs/Si和InP分别高0.18和0.28% overbias ratio and with avalanche region width of 1500 nm.
Single photon avalanche diodes (SPADs) are key enabling technologies for a wide range of applications in the near-infrared wavelength range. Recently, AlAs0.56 Sb0.44 (hereafter AlAsSb) lattice-matched to InP has been demonstrated for extremely low excess noise avalanche photodiodes (APDs) due to its large disparity between electron and hole ionization coefficients ( $\alpha $ and $\beta $ respectively). The $\alpha /\beta $ ratio also plays a role in Geiger mode operation as it affects the avalanche breakdown probability and hence detection efficiency. In this work, we theoretically investigate the performance of AlAsSb based SPADs. The probability of breakdown for electron-initiated Geiger mode operation increases more sharply with multiplication region width due to progressively more dissimilar ionization coefficients. In comparison with other common avalanche materials, such as InAlAs, InP and Si, our result also suggests that SPADs based on AlAsSb have a sharper breakdown probability than the other three materials under similar low overbias ratio. The calculated breakdown probability of 0.81 in AlAsSb is 0.18 and 0.28 higher than that of InAlAs/Si and InP respectively at 5% overbias ratio and with avalanche region width of 1500 nm.