Annealing effect on ITO thin films prepared by microwave-enhanced dc reactive magnetron sputtering for telecommunication applications
Annealing effect on ITO thin films prepared by microwave-enhanced dc reactive magnetron sputtering for telecommunication applications
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DOI：
10.1016/s0257-8972(02)00767-3
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发表时间：
2003-03
影响因子：
5.4
通讯作者：
Lijian Meng;F. Placido
中科院分区：
文献类型：
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作者：
Lijian Meng;F. Placido
在两种不同的氧分压（3.8×10− 4和1.2×10−3mbar）下，在玻璃衬底上沉积了氧化铟锡（ITO）薄膜。在沉积之后，将这些膜分别在200 °C和400 °C下在空气中退火30分钟。研究了这些沉积后处理对ITO薄膜的结构、电学和光学性能的影响。已经发现，在200 °C下退火适合于改善这些ITO膜的性质。
Indium-tin oxide (ITO) thin films were deposited on glass substrates at two different oxygen partial pressures (3.8×10−4and 1.2×10−3mbar). After the deposition, these films were annealed for 30 min in air at 200 °C and 400 °C, respectively. The effect of these post-deposition treatments on the structural, electrical and optical properties of ITO thin films has been studied. It has been found that annealing at 200 °C is suitable for improving the properties of these ITO films.