Inverse Resistance Change Cr2Ge2Te6-Based PCRAM Enabling Ultralow-Energy Amorphization
Inverse Resistance Change Cr2Ge2Te6-Based PCRAM Enabling Ultralow-Energy Amorphization
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DOI：
10.1021/acsami.7b16755
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发表时间：
2018-01-24
影响因子：
9.5
通讯作者：
Koike, Junichi
中科院分区：
文献类型：
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作者：
Hatayama, Shogo;Sutou, Yuji;Koike, Junichi
相变随机存取存储器（PCRAM）作为下一代非易失性存储器已经引起了人们的广泛关注，它可以取代闪存并且可以用于存储级存储器。通常，PCRAM依赖于相变材料的电阻在高电阻非晶（复位）和低电阻结晶（设置）状态之间的变化。在此，我们提出了一种具有Cr2Ge2Te6（CrGT）的反向电阻变化PCRAM，其显示出高电阻的晶体复位状态和低电阻的非晶设置状态。反向电阻变化被认为是由于在结晶时，这导致了大的增加CrGT和电极之间的接触电阻率的载流子密度急剧下降。CrGT存储单元被证明显示出快速可逆电阻切换，具有比Ge2Sb2Te5存储单元低得多的非晶化操作能量。CrGT中的这种低操作能量应该是由于小的编程非晶体积，这可以通过高电阻晶体基质和主要接触电阻来实现。同时CrGT可以打破结晶温度和操作速度之间的折衷关系。
Phase-change random access memory (PCRAM) has attracted much attention for next-generation nonvolatile memory that can replace flash memory and can be used for storage-class memory. Generally, PCRAM relies on the change in the electrical resistance of a phase-change material between high-resistance amorphous (reset) and low-resistance crystalline (set) states. Herein, we present an inverse resistance change PCRAM with Cr2Ge2Te6 (CrGT) that shows a high-resistance crystalline reset state and a low-resistance amorphous set state. The inverse resistance change was found to be due to a drastic decrease in the carrier density upon crystallization, which causes a large increase in contact resistivity between CrGT and the electrode. The CrGT memory cell was demonstrated to show fast reversible resistance switching with a much lower operating energy for amorphization than a Ge2Sb2Te5 memory cell. This low operating energy in CrGT should be due to a small programmed amorphous volume, which can be realized by a high-resistance crystalline matrix and a dominant contact resistance. Simultaneously) CrGT can break the trade-off relationship between the crystallization temperature and operating speed.