Design of n-type silicon-based quantum cascade lasers for terahertz light emission
Design of n-type silicon-based quantum cascade lasers for terahertz light emission
复制标题
用于太赫兹光发射的n型硅基量子级联激光器的设计
DOI：
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发表时间：
2007
期刊：
影响因子：
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通讯作者：
R. Paiella
中科院分区：
文献类型：
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作者：
K. Driscoll;R. Paiella
研究了基于Ge∕SiGe量子阱电子子带间跃迁的太赫兹量子级联激光器的设计。首先提出了这些异质结构导带排列的详细理论模型，并用于表明通过适当选择层成分和厚度可以获得 L 谷中的大量子限制。然后讨论了关键激光器设计参数的计算，包括 L 谷椭球恒能表面所发挥的重要作用。最后，通过两个设计用于接近 50 和 25μm 发射的示例性结构说明了该材料系统特有的主要设计问题及其高性能运行的潜力。
The design of terahertz quantum cascade lasers based on electronic intersubband transitions in Ge∕SiGe quantum wells is investigated. A detailed theoretical model of the conduction-band lineup of these heterostructures is first presented and used to show that large quantum confinement in the L valleys can be obtained with properly selected layer compositions and thicknesses. Computation of the key laser design parameters is then discussed, including the important role played by the L-valley ellipsoidal constant-energy surfaces. Finally, the main design issues specific to this material system and its potential for high-performance operation are illustrated by means of two exemplary structures, designed for emission near 50 and 25μm.