Investigation on the formation mechanism of p-type ZnO:In-N thin flms: experiment and theory
Investigation on the formation mechanism of p-type ZnO:In-N thin flms: experiment and theory
复制标题
p型ZnO:In-N薄膜形成机制的研究：实验与理论
DOI：
10.1007/s10854-019-00906-z
复制
发表时间：
--
期刊：
影响因子：
--
通讯作者：
Chunyang Kong
中科院分区：
文献类型：
--
作者：
Guoping Qin;Hong Zhang;Wanjun Li;Haibo Ruan;Jiang Wang;Dong Wang;Liang Fang;Chunyang Kong
Effects of post-annealing on electrical properties of N+ion-implanted into indium doped ZnO (ZnO:In-N) films are investigated. p-type conduction of ZnO:In-N films with the appropriate annealing have been confirmed by Hall-effect measurements and electrical rectification behavior of homojunctions. The transmitted spectra and temperature-dependent photoluminescence (PL) spectroscopy results show that the band gap of p-type ZnO:In-N is narrow as compared to ZnO:In and the ionization acceptor energy is estimated to be 128 meV, which agrees well with our calculated transition levelsof InZn-2NO. X-ray photoelectron spectroscopy (XPS) spectra confirm the dominant existence of N-related acceptor defect complexes in p-type samples. Combining with transition state calculations, we find that the incorporation of In can facilitate p-type effective doping by pinning a passive impurity band above the valence band maximum (VBM) and decreasing thermal activation energy of N interstitial (Ni) in ZnO.
