InAs/GaAs quantum dots with wide-range tunable densities by simply varying V/III ratio using metal-organic chemical vapor deposition.
InAs/GaAs quantum dots with wide-range tunable densities by simply varying V/III ratio using metal-organic chemical vapor deposition.
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通过使用金属有机化学气相沉积简单地改变 V/III 比率，即可获得具有宽范围可调密度的 InAs/GaAs 量子点
DOI：
10.1186/1556-276x-8-367
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发表时间：
2013-08-28
影响因子：
--
通讯作者：
Fang Y
中科院分区：
文献类型：
--
作者：
Li S;Chen Q;Sun S;Li Y;Zhu Q;Li J;Wang X;Han J;Zhang J;Chen C;Fang Y
本文描述了InAs/GaAs量子点随V/III比增加的复杂行为，这些行为与几种竞争机制有关。结果表明，通过金属有机物化学气相沉积，通过简单地控制V/III比值，可以在105 ~ 1010 cm-2的范围内对InAs量子点的密度进行调节.这些结果主要归因于V/III比的增加引起的覆盖度和In吸附原子迁移长度的变化。
The complicated behaviors of InAs/GaAs quantum dots with increasing V/III ratio associated with several competing mechanisms have been described. The results demonstrate that the densities of InAs quantum dots can be tuned in a wide range from 105to 1010cm−2by simply manipulating V/III ratio via metal-organic chemical vapor deposition. These results are mainly ascribed to the changes of coverage and In adatom migration length due to the increasing V/III ratio.