Pattern formation of polyimide by using photosensitive polybenzoxazole as a top layer
Pattern formation of polyimide by using photosensitive polybenzoxazole as a top layer
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DOI：
10.1016/j.eurpolymj.2010.04.004
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发表时间：
2010-07
影响因子：
6
通讯作者：
Tomohito Ogura;Tomoya Higashihara;M. Ueda
中科院分区：
文献类型：
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作者：
Tomohito Ogura;Tomoya Higashihara;M. Ueda
基于聚苯并恶唑（PSPBO）和聚酰胺酸（PAA）双层光敏膜，开发了一种通用的聚酰亚胺（PI）正型图案化方法，为微电子领域提供了一种有前途的材料。该图案化系统由原始PAA厚底层和聚（邻羟基酰胺）（PHA）薄顶层组成，其中9，9-双[4-（叔丁氧基羰基-甲氧基）苯基]芴（TBMPF）作为溶解抑制剂，（5-丙基磺酰氧基亚氨基-5H-噻吩-2-亚基）-（2-甲基苯基）-乙腈（PTMA）作为光酸产生剂（PAG）。以4，4 ′-（六氟异亚丙基）-双邻氨基苯酚和4，4 ′-氧代双苯甲酸衍生物、3，3 ′，4，4 ′-联苯四甲酸二酐和4，4 ′-二氨基二苯醚为原料，在N，N-二甲基乙酰胺中合成了PHA和PAA。这种基于PHA（150-nm厚度）和PAA（1.5-μm厚度）的双层系统在365 nm线（i-line）曝光、100°C后烘2 min、2.38wt.%显影时显示出35 mJ/cm 2的高灵敏度和10.3的高对比度四甲基氢氧化铵水溶液/5 wt.%异丙醇，25°C。通过接触印刷模式将4 μm线和空间图案的清晰正像印刷在膜上，该膜通过100 mJ/cm 2的i线曝光，并且在350°C下加热时完全转化为相应的PBO/PI图案，通过FT-IR光谱证实。这种双层系统可以应用于各种PAA的图案化。
A versatile method for positive-type patterning of polyimide (PI) based on a two-layer photosensitive poly(benzoxazole) (PSPBO) and poly(amic acid) (PAA) film has been developed to provide a promising material in the field of microelectronics. This patterning system consisted of a pristine PAA thick bottom-layer and a poly(o-hydroxy amide) (PHA) thin top layer with 9,9-bis[4-(tert-butoxycarbonyl-methyloxy)phenyl]fluorene (TBMPF) as a dissolution inhibitor, and (5-propylsulfonyloxyimino-5H-thiophene-2-ylidene)-(2-methylphenyl)-acetonitrile (PTMA) as a photoacid generator (PAG). The PHA and PAA were prepared from 4,4′-(hexafluoroisopropylidene)-bis(o-aminophenol) and 4,4′-oxybis(benzoic acid) derivatives, and 3,3′,4,4′-biphenyltetracarboxylic dianhydride and 4,4′-oxydianiline, respectively, in N,N-dimethylacetamide. This two-layer system based on PHA (150-nm thickness) and PAA (1.5-μm thickness) showed high sensitivity of 35mJ/cm2and high contrast of 10.3 when exposed to a 365nm line (i-line), post-baked at 100°C for 2min, and developed in a 2.38wt.% tetramethylammonium hydroxide aqueous solution/5wt.% iso-propanol at 25°C. A clear positive image of a 4-μm line-and-space pattern was printed on a film which was exposed to 100mJ/cm2of i-line by a contact-printing mode and fully converted to the corresponding PBO/PI pattern upon heating at 350°C, confirmed by FT-IR spectroscopy. This two-layer system could be applied to the patterning of various PAAs.