Buried air gap structure for improving the breakdown voltage of SOI power MOSFET's
Buried air gap structure for improving the breakdown voltage of SOI power MOSFET's
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DOI：
10.1109/ipemc.2000.882975
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发表时间：
2000-08
期刊：
影响因子：
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通讯作者：
B. Jeon;D.Y. Kim;Y.S. Lee;J. Oh;M. Han;Y. Choi
中科院分区：
文献类型：
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作者：
B. Jeon;D.Y. Kim;Y.S. Lee;J. Oh;M. Han;Y. Choi
提出了一种采用埋气隙结构（BAGS）的SOI功率MOSFET，并通过数值模拟进行了验证。由于埋层气隙有效地降低了漏结附近的垂直电场，因此该结构比传统结构具有更高的击穿电压。结果表明，由于埋气隙的低介电常数，漏-衬底电容减小。
A novel SOI power MOSFET employing a buried air gap structure (BAGS) is proposed and verified by numerical simulation. Higher breakdown voltage is achieved in proposed structure than conventional ones, because the buried air gap reduces the vertical electric field near the drain junction efficiently. It is shown that the drain-substrate capacitance is reduced due to the low dielectric constant of the buried air gap.