Intersubband absorption saturation in AlN-based waveguide with GaN/AlN multiple quantum wells grown by metalorganic vapor phase epitaxy
Intersubband absorption saturation in AlN-based waveguide with GaN/AlN multiple quantum wells grown by metalorganic vapor phase epitaxy
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DOI：
10.1063/1.3650929
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发表时间：
2011-10
影响因子：
4
通讯作者：
H. Sodabanlu;Jung-Seung Yang;Takuo Tanemura;M. Sugiyama;Y. Shimogaki;Y. Nakano
中科院分区：
文献类型：
--
作者：
H. Sodabanlu;Jung-Seung Yang;Takuo Tanemura;M. Sugiyama;Y. Shimogaki;Y. Nakano
采用金属有机物气相外延（MOVPE）技术制备了400 μm长的Si_3 N_4脊形AlN基GaN/AlN多量子威尔斯光波导，在1.57 μm波长处观察到了子带间吸收饱和现象。自饱和测量采用1.56 μm短脉冲激光，其时间宽度为0.4 ps（半峰全宽），重复频率为63 MHz。使用115 pJ的脉冲能量实现了5dB的子带间吸收饱和。利用金属有机物气相外延（MOVPE）技术制备了400 μm长的Si_3 N_4脊形AlN基GaN/AlN多量子威尔斯（MQW）波导，在1.57 μm波长处观察到了子带间吸收饱和现象。自饱和测量采用1.56 μm短脉冲激光，其时间宽度为0.4 ps（半峰全宽），重复频率为63 MHz。使用115 pJ的脉冲能量实现了5dB的子带间吸收饱和。我们已经证明了MOVPE生长的GaN/AlN多量子阱的子带间光学器件在通信波长工作的能力。
Intersubband absorption saturation at 1.57 μm wavelength was observed in a 400-μm long Si3N4-rib AlN-based waveguide with GaN/AlN multiple quantum wells (MQWs) fabricated by metalorganic vapor phase epitaxy (MOVPE). The self-saturation measurement was employed using a 1.56-μm short pulse laser which has a temporal width of 0.4 ps (full-width at half-maximum) and a repetition rate of 63 MHz. An intersubband absorption saturation by 5 dB was achieved using a pulse energy of 115 pJ. We have demonstrated the capability of MOVPE-grown GaN/AlN MQWs for intersubband optical devices operated at communication wavelength.Intersubband absorption saturation at 1.57 μm wavelength was observed in a 400-μm long Si3N4-rib AlN-based waveguide with GaN/AlN multiple quantum wells (MQWs) fabricated by metalorganic vapor phase epitaxy (MOVPE). The self-saturation measurement was employed using a 1.56-μm short pulse laser which has a temporal width of 0.4 ps (full-width at half-maximum) and a repetition rate of 63 MHz. An intersubband absorption saturation by 5 dB was achieved using a pulse energy of 115 pJ. We have demonstrated the capability of MOVPE-grown GaN/AlN MQWs for intersubband optical devices operated at communication wavelength.