Theoretical Study of Epitaxial Graphene Growth on SiC(0001) Surfaces
Theoretical Study of Epitaxial Graphene Growth on SiC(0001) Surfaces
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DOI：
10.1143/apex.2.065502
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发表时间：
2009-06-01
影响因子：
2.3
通讯作者：
Yamaguchi, Hiroshi
中科院分区：
文献类型：
--
作者：
Kageshima, Hiroyuki;Hibino, Hiroki;Yamaguchi, Hiroshi
基于能量学的第一性原理计算，研究了石墨烯在SiC（0001）表面的外延生长机理。据发现，Si终止表面是重要的薄的平坦石墨烯片的外延生长。该表面促进石墨烯片的生长，因为表面Si原子充当催化剂。Si脱附位点捕获过量的C原子，并形成石墨烯岛。还发现，新的石墨烯片更倾向于仅在SiC衬底的Si终止表面上生长，即使该表面被其他石墨烯片覆盖。(c)2009日本应用物理学会
The epitaxial graphene growth mechanism on SiC(0001) surfaces is studied based on the energetics via the first-principles calculation. It is found that a Si terminated surface is important for the epitaxial growth of thin flat graphene sheets. This surface encourages the growth of graphene sheets because the surface Si atoms act as catalyst. Si desorbed sites trap excess C atoms, and form graphene islands. It is also found that the new graphene sheet prefers to grow just on the Si terminated surface of the SiC substrate even if the surface is covered with other graphene sheets. (c) 2009 The Japan Society of Applied Physics