Perpendicular magnetic anisotropy in Ta/Pd/Co2FeAl0.5Si0.5/MgO/Ta structured films
Perpendicular magnetic anisotropy in Ta/Pd/Co2FeAl0.5Si0.5/MgO/Ta structured films
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DOI：
10.1016/j.physb.2015.04.026
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发表时间：
2015-07-01
影响因子：
2.8
通讯作者：
Tian, N.
中科院分区：
文献类型：
--
作者：
Fu, H. R.;You, C. Y.;Tian, N.
本文在Ta/Pd/Co_2FeAl_（0.5）Si_（0.5）/MgO/Ta薄膜中实现了垂直磁各向异性（PMA）。而在没有MgO覆盖层的Ta/Pd/Co_2FeAl_（0.5）Si_（0.5）/Ta薄膜中没有观察到这种现象。当退火温度为300 ℃时，厚Co_2FeAl_（0.5）Si_（0.5）层的PMA值为4.8 μ m。在Ta/Pd/Co_2FeAl_（0.5）Si_（0.5）/Ta结构薄膜中，在Ta和Co_2FeAl_（0.5）Si_（0.5）之间插入Pd层是获得PMA的关键。然而，插入Pd层的厚度对PMA的值（K-eff）没有显著影响。在300摄氏度下退火的薄膜保持类似的k（eff），约为1.23 × 10（6）erg/cm（3），而插入的Pd层超过临界厚度。(C)2015 Elsevier B. V.版权所有。
In this work, the perpendicular magnetic anisotropy (PMA) was realized in Ta/Pd/Co2FeAl0.5Si0.5/MgO/Ta Films. but not observed in Ta/Pd/Co2FeAl0.5Si0.5/Ta films without MgO cap layer. A strong PMA had been achieved for a thick Co2FeAl0.5Si0.5 layer about 4.8 am at the annealing temperature of 300 degrees C. Inserted Pd layer between Ta and Co2FeAl0.5Si0.5 layers was crucial to obtain PMA in Ta/Pd/Co2FeAl0.5Si0.5/Ta structured films. However, the thickness of inserted Pd layer has no significant effect on the value (K-eff) of PMA. The films annealed at 300 degrees C remain a similar k(eff) of around 1.23 x 10(6) erg/cm(3) while the inserted Pd layer is beyond a critical thickness. (C) 2015 Elsevier B.V. All rights reserved.