160 GHz Passively Mode-Locked AlGaInAs 1.55 µm Strained Quantum-Well Lasers With Deeply Etched Intracavity Mirrors
160 GHz Passively Mode-Locked AlGaInAs 1.55 µm Strained Quantum-Well Lasers With Deeply Etched Intracavity Mirrors
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具有深蚀刻腔内镜的 160 GHz 被动锁模 AlGaInAs 1.55 µm 应变量子阱激光器
DOI：
10.1109/jstqe.2012.2230318
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发表时间：
2013
影响因子：
4.9
通讯作者：
Hou L
中科院分区：
文献类型：
--
作者：
Hou L
我们表征了具有由不同数量的槽组成的腔内反射器（ICR）的二极管激光器的反射率、模态辨别和无源锁模性能。经过分析，我们证明，由使用 1.55 μm AlGaInAs 应变量子阱材料制造的单个深蚀刻 ICR 槽形成的复合腔组成的单片半导体锁模激光器提供了最佳的谐波 = 4) 锁模性能，以 161.8 GHz 的脉冲重复率和 1.67 ps 的脉冲持续时间生成高斯脉冲，提供 0.81 的时间带宽积。
We have characterized the reflectivity, modal discrimination, and passive mode locking performance of diode lasers with intracavity reflectors (ICR) composed of a different number of slots. Upon analysis, we demonstrate that a monolithic semiconductor mode-locked laser comprising a compound cavity formed by a single deeply etched ICR slot fabricated using the 1.55 μm AlGaInAs strained quantum-well material provides the best harmonic= 4) mode-locking performance, with Gaussian-pulses generated at a pulse repetition rate of 161.8 GHz and a pulse duration of 1.67 ps, providing a time-bandwidth product of 0.81.