Self-adjusting sensing circuit without speed penalty for reliable STT-MRAM
Self-adjusting sensing circuit without speed penalty for reliable STT-MRAM
复制标题
自调节传感电路，无速度损失，可实现可靠的 STT-MRAM
DOI：
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发表时间：
2017
期刊：
影响因子：
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通讯作者：
K.‐W. Kwon
中科院分区：
文献类型：
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作者：
J.‐W. Ryu;K.‐W. Kwon
提出了一种自调节传感电路自旋转矩传递磁随机存取存储器（STT-MRAM）。STT-MRAM被认为是新兴记忆中最有前途的候选者。然而，由于隧道磁阻比（TMR）低和读取电流小，读取性能成为新的瓶颈。所提出的自调节传感电路具有较好的传感裕度，克服了STT-MRAM的缺点。所提出的电路采用Verilog-A模型，对65nm互补金属氧化物半导体工艺进行了评价，并进行了蒙特卡罗分析。分析结果表明，所提出的电路保证了一定的传感余量，在TMR 150%时大于200mv，在TMR 100%时约为50mv。
A self-adjusting sensing circuit spin-torque transfer magnetic random access memory (STT-MRAM) is proposed. STT-MRAM is considered to be the most promising candidate among the new emerging memories. However, read performance has emerged as a new bottleneck, because of its low tunnelling magneto-resistance ratio (TMR) and low read current. The proposed self-adjusting sensing circuit shows an improved sensing margin, overcoming the weaknesses of the STT-MRAM. The proposed circuit using Verilog-A model, a 65 nm complementary metal–oxide–semiconductor process also evaluated, and Monte Carlo analysis. The results of analysis show that the proposed circuit ensures a certain sensing margin, which is more than 200 mV in TMR 150% and about 50 mV in TMR 100%.