Fine structure splitting reduction in droplet epitaxy GaAs quantum dots grown on (111)A surface
Fine structure splitting reduction in droplet epitaxy GaAs quantum dots grown on (111)A surface
复制标题
DOI：
10.1088/1742-6596/245/1/012049
复制
发表时间：
2010-09
期刊：
影响因子：
--
通讯作者：
M. Abbarchi;T. Kuroda;T. Mano;K. Sakoda
中科院分区：
文献类型：
--
作者：
M. Abbarchi;T. Kuroda;T. Mano;K. Sakoda
在这篇文章中，我们比较了用改进的液滴外延(DE)方法在(100)和(111)A AlGaAs衬底上生长的自组装量子点(QD)的几何对称性。用原子力显微镜研究了量子点的形貌，用显微光致发光光谱(μPL)比较了量子点尺寸和形状对精细结构分裂的影响。结果表明：(1)精化的DE提高了生长在(100)AlGaAs衬底上的量子点的延伸率，增加了量子点的精细结构分裂；(2)通过在(111)A表面生长量子点，可以恢复良好的几何圆对称性，获得较小的精细结构分裂。
In this contribution we compare the geometrical symmetry of self-assembled GaAs quantum dots (QDs) grown by a refined droplet epitaxy (DE) method on (100) and (111)A AlGaAs substrate. By atomic force microscopy (AFM) we study the morphology of the QDs and by micro–photoluminescence spectroscopy (μPL) we compare the dependence of the fine structure splitting on QD size and shape. We show that: i) the refined DE enhances the elongation of QDs grown on (100) AlGaAs substrate increasing the fine structure splitting; ii) by growing the QDs on the (111)A AlGaAs surface it is possible to recover a good geometrical circular symmetry obtaining a small value of the fine structure splitting .