Combined influence of Coulomb interaction and polarons on the carrier dynamics in InGaAs quantum dots
Combined influence of Coulomb interaction and polarons on the carrier dynamics in InGaAs quantum dots
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库仑相互作用和极化子对 InGaAs 量子点载流子动力学的综合影响
DOI：
10.1103/physrevb.88.205309
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发表时间：
2013
影响因子：
3.7
通讯作者：
F. Jahnke
中科院分区：
文献类型：
--
作者：
A. Steinhoff;H. Kurtze;P. Gartner;M. Florian;D. Reuter;A. D. Wieck;M. Bayer;F. Jahnke
用微观理论分析了自组织半导体量子点中载流子捕获和驰豫动力学的实验结果。在较宽的载流子温度和激发密度范围内，研究了势垒态超快光激发后量子点跃迁的时间分辨微分透过率变化。这些测量可以用量子点极化子散射和由于额外的库仑散射过程引起的依赖于激发的重整化来解释。在非微扰跃迁速率下，组态图像和单粒子图像的描述结果与实验符合得很好，而玻耳兹曼散射率导致了不同的激发密度和温度依赖性。
Experimental results for the carrier capture and relaxation dynamics in self-organized semiconductor quantum dots are analyzed using a microscopic theory. Time-resolved differential transmission changes of the quantum-dot transitions after ultrafast optical excitation of the barrier states are studied in a wide range of carrier temperatures and excitation densities. The measurements can be explained by quantum-dot polaron scattering and their excitation-dependent renormalization due to additional Coulomb scattering processes. Results of configuration-picture and single-particle-picture descriptions, both with nonperturbative transition rates, show good agreement with the experiments while Boltzmann scattering rates lead to a different excitation density and temperature dependence.